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1N5711 and 1N6263
Small-Signal Diode Schottky Diodes
Features
For general purpose applications Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the MiniMELF case with type designation LL5711 and LL6263.
Mechanical Data
Case: DO-35 Glass Case Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified.) Parameter Peak inverse voltage Power dissipation (Infinite heatsink) Maximum single cycle surge 10 us square wave Thermal resistance junction to ambient air Junction temperature Storage temperature range 1N5711 1N6263 Symbol VRRM Ptot IFSM RJA Tj TS Value 70 60 400
(1)
Unit Volts mW Amps
o
2.0 0.3 125
(1)
C/mW
o
(1)
C C
-55 to +150
(1)
o
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter Reverse breakdown voltage Leakage current Forward voltage drop Junction capacitance Reverse recovery time 1N5711 1N6263 Symbol V(BR)R IR VF Ctot trr Test Condition IR=10uA VR=50V IF=1mA IF=15mA VR=0V, f=1MHz IF=IR=5mA, recovery to 0.1IR Min. 70 60 Typ. Max. 200 0.41 1.0 2.2 1 Unit Volts nA Volt pF ns
Notes:
1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
673
RATINGS AND CHARACTERISTIC CURVES
(TA = 25oC unless otherwise noted)
674

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